PECVD
PECVD
PECVD
PECVD
SiRiUS – Single CH Type
SiRiUS – Single CH Type
SiRiUS – Twin CH Type
SiRiUS – Twin CH Type
● Unique Design
- Dual Chamber Structure (Ceramic Bowl in Chamber)
- Symmetric Gas Flow and TEMP
● Unique Design
- Dual Chamber Structure (Ceramic Bowl in Chamber)
- Symmetric Gas Flow and TEMP
● System Configuration (Single/TWIN)
- ALN Heater: ~550°C
- RF: Single (13.56Mhz)
Dual (13.56Mhz/400Khz) - Separate RPS
● System Configuration (Single/TWIN)
- ALN Heater: ~550°C
- RF: Single (13.56Mhz)
Dual (13.56Mhz/400Khz) - Separate RPS
● Patent
- Dual Chamber: Bowl Structure
- Movement Structure of Dual Bellows
● Patent
- Dual Chamber: Bowl Structure
- Movement Structure of Dual Bellows
● Process Integrated System
- SiCN (>500°C / 350°C/ <200°C)
- SIN, SION, SiO2 (SiH4)
● Process Integrated System
- SiCN (>500°C / 350°C/ <200°C)
- SIN, SION, SiO2 (SiH4)
GAS Flow Analysis
GAS Flow Analysis
Temperature Analysis
Temperature Analysis
● Performance
- Better THK. Uniformity: <2.0%: Symmetric gas flow and tem
- Low level of particle generation
- Effective Cleaning cycle
- High Dry cleaning efficiency
: Small Processing Volume
: Warm wall (Bowl) effect > Lower film adding and Higher Dry etching rate on Bowl surface
● Performance
- Better THK. Uniformity: <2.0%: Symmetric gas flow and tem
- Low level of particle generation
- Effective Cleaning cycle
- High Dry cleaning efficiency
: Small Processing Volume
: Warm wall (Bowl) effect > Lower film adding and Higher Dry etching rate on Bowl surface
● Lower Co0
- High Throughput
- Reduced Gas Consumption: Small Processing Volume
- Longer MTBF & Shorter MTTR
- Less Consumable Parts
● Lower Co0
- High Throughput
- Reduced Gas Consumption: Small Processing Volume
- Longer MTBF & Shorter MTTR
- Less Consumable Parts
